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Imec Advances 200mm GaN-on-Si Technology Closer to Manufacturing

Shows achievements in low dispersion buffers, high current high-threshold voltage p-GaN devices at IEDM 2015.

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By: DAVID SAVASTANO

Contributing Editor, Coatings World and Ink World, Coatings World and Ink World Magazine

At the IEEE International Electron Devices Meeting 2015, imec presented three novel aluminum gallium nitride (AlGaN)/gallium nitride (GaN) stacks featuring optimized low dispersion buffer designs. IMEC optimized the epitaxial p-GaN growth process on 200mm silicon wafers, achieving e-mode devices featuring beyond state-of-the-art high threshold voltage (Vt) and high drive current (Id).
 
To achieve a good, current-collapse-free device operation in AlGaN/GaN-on-Silicon (Si) devices, dispersion must be kept to a minimum. Trapped charges in the buffer between the GaN-based channel and the silicon substrate are known to be a critical factor in causing dispersion.
 
Imec compared the impact of different types of buffers on dispersion and optimized three types: a classic step-graded buffer, a buffer with low-temperature AlN interlayers, and a super lattice buffer. These three types of buffers were optimized for low dispersion, leakage and breakdown voltage over a wide temperature range and bias conditions. 
 
Imec also optimized the epitaxial p-GaN growth process demonstrating improved electrical performance of p-GaN HEMTs, achieving a beyond state-of-the-art combination of high threshold voltage, low on-resistance and high drive current (Vt >2V, RON = 7 Ω.mm and Id >0.4A/mm at 10V).
 
Imec’s GaN-on-Si R&D program aims at bringing this technology towards industrialization. Imec’s offering includes a complete 200mm CMOS-compatible 200V GaN process line.

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